Thermal stability of the long-period polytype of SiC, 51R, at 2500°C
作者： Zenzaburo Inoue , Yoshizo Inomata
DOI: 10.1016/0022-0248(80)90139-6
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摘要: Abstract The thermal stability of 51R[(33) 2 32] 3 silicon carbide was directly compared with that the 15R type by using single crystals each polytype. results proved 51R is more stable than at 2500°C. In addition, it revealed amount growth probability long-period polytypes [(33) n series such as 33R, 51R, 69R exceeds type.
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