High aspect ratio plasma etch for 3D NAND semiconductor applications

摘要: Embodiments of the present disclosure provide methods for forming features in a film stack that may be utilized to form stair-like structures with accurate profiles control manufacturing three dimensional (3D) stacking semiconductor chips. In one example, method etching material layer disposed on substrate using synchronized RF pulses includes providing an gas mixture into processing chamber having substrate, synchronously pulsing source power and bias at ratio less than 0.5, substrate.