light emitting semiconductor device and its manufacturing method
作者： Yuji Furushima
DOI:
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摘要: The present invention discloses a highly bright short wavelength light emitting semiconductor device with high reliance having improved crystallinity and surface smoothness. comprises at least one layer of In x Ga y Al 1-x-y N (where, 0≦x≦1, 0≦x+y≦1) formed on sapphire substrate or Si substrate, wherein ZnO buffer (2) which can lattice match is the (1) manufacturing method thereof.
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