Semiconductor light-emitting element
作者： Susumu Noda , Yoshitaka Kurosaka , Akiyoshi Watanabe , Kazuyoshi Hirose , Takahiro Sugiyama
DOI:
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摘要: In a semiconductor light-emitting element, an underlayer is made of AlN layer, and first cladding layer n-AlGaN layer. A composed base i-GaN plural island-shaped single crystal portions i-AlGaInN isolated in the Then, at least one rare earth metal element incorporated into and/or portions.
google.de 参考文章(201)
Jean-Michel Gerard, Claude Weisbuch, Semiconductor structure for optoelectronic components with inclusions ,(1991)
Michael Cohn, Compliant hermetic package ,(2002)
Ji-Hao Liang, Tatsuma Saito, Semiconductor light-emitting device manufacturing method and semiconductor light-emitting device ,(2011)
Hwan Hee Jeong, Light emitting device, light emitting device package and image display device including the same ,(2011)
Ashmeet K. Samal, GaN BASED LIGHT EMITTERS WITH BAND-EDGE ALIGNED CARRIER BLOCKING LAYERS ,(2010)
Yoshihiro Sugiyama, Quantum semiconductor device having a quantum dot structure ,(1998)
Atsushi Yamaguchi, Masaru Kuramoto, Nitride based semiconductor device and method of forming the same ,(2001)
Xiaohang Li, Monolithic semiconductor light emitting devices and methods of making the same ,(2013)
Young-soo Park, Jun-Youn Kim, Jae-Kyun Kim, Joo-sung Kim, Young-jo Tak, Semiconductor light emitting device including hole injection layer ,(2014)
Kyosuke Masuya, Takashi Hodota, Takehiko Okabe, Semiconductor light-emitting element, method for producing the same, lamp, lighting device, electronic equipment, mechanical device and electrode ,(2010)