作者: Kim Hai Wong , Krishnamoorthy Ananthanarayanan , Marc Daniel Heinemann , Joachim Luther , Palani Balaya
DOI: 10.1016/J.SOLENER.2012.08.004
关键词:
摘要: Metal oxide semiconductors are promising interfacial materials for organic photovoltaics (OPVs) because of their electrical properties and solution processability. In this article, we report the fabrication poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester (P3HT:PCBM) OPV devices incorporating solution-based NiO layers that show enhancements device photocurrent stability. We discuss impact parasitic shunt series resistances on performance as well ambient degradation these devices, studied with intensity modulated spectroscopy (IMPS). The results showed charge extraction was predominantly affected by via decrease in carrier mobility increased trapping/recombination, revealing physical mechanism behind observed. 2012 Elsevier Ltd. All rights reserved.