Effect of carrier confinement and doping in quantum well tunnel junctions
作者： Chaffra A. Affouda , Matthew P. Lumb , Mitchell F. Bennett , Kenneth J. Schmieder , Maria Gonzalez
DOI: 10.1109/PVSC.2015.7356193
关键词:
摘要: Quantum well tunnel junctions have attractive properties for the design of multi-junction solar cells and represent a good alternative to homo-junction diodes. Tunnel based on InAlAs quantum wells were grown strain balanced InP with varying barrier thicknesses. We characterized their current voltage characteristics found that devices thicker thinner performed best provided doping profile across structure is accurately controlled. explain effects thicknesses due confinement as using Poisson-Schrodinger model coupled non-local tunneling implemented in numerical drift-diffusion solver.
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