Strain balanced double quantum well tunnel junctions
作者： Michael K. Yakes , Matthew P. Lumb , Christopher G. Bailey , Maria Gonzalez , Robert J. Walters
DOI: 10.1109/PVSC.2013.6744899
关键词: Quantum well 、 Substrate (electronics) 、 Concentrator 、 Quantum tunnelling 、 Band gap 、 Optoelectronics 、 Solar cell 、 Gallium arsenide 、 Tunnel junction 、 Materials science
摘要: Quantum well tunnel junctions have been shown to improve the performance of within a concentrator solar cell with low absorption loss. In this work, we demonstrated strain balanced quantum which may be used incorporate materials junction more desirable bandgaps without any degradation in material properties. Our strained InAlAs/InGaAs QWTJ an InP substrate shows dramatically improved improvement over baseline device peak tunneling current and 45,000x differential resistance.
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