Split InAlAs top cell enabled four-junction solar cell lattice matched to InP
作者： Michael K. Yakes , Kenneth J. Schmieder , Matthew P. Lumb , Mitchell F. Bennett , Louise C. Hirst
DOI: 10.1109/PVSC.2016.7750171
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摘要: We have demonstrated for the first time a proof of concept four junction solar cell grown on an InP substrate. The split top design uses two 1.45 eV InAlAs subcells in series to take advantage large portion spectrum with energies higher than this bandgap. prototype has open circuit voltage 2.44 V and short current density 1.8 mA/cm2. Further optimization may allow performance comparable high quality triple-junction GaAs cells. This architecture be useful other systems where wide bandgaps are not available or materials carrier collection is strongly limited by diffusion length within material.
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