Antisite defect-free Lu3(GaxAl1−x)5O12:Pr scintillator
作者： M. Nikl , J. Pejchal , E. Mihokova , J. A. Mares , H. Ogino
DOI: 10.1063/1.2191741
关键词:
摘要: Pr-doped Lu3(GaxAl1−x)5O12:Pr, x=0–1, single crystals were grown by the micro-pulling-down method. We study luminescence and scintillation characteristics of sample set focusing on their dependence gallium content. For x=0.4 we obtain high figure-of-merit material with elevated density, efficiency, very fast response below 20ns without any slower components. Improvement performance is explained as due to absence antisite LuAl defects that was for first time realized in such bulk garnet from temperature melt.
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