Laser programmed vias for restructurable VLSI

摘要: A technique has been developed which uses a laser to form selectively connecting vias between two levels of aluminum wiring on silicon wafer. The same can remove metal thus providing capability either adding or deleting connections in fully fabricated devices. Experiments have performed with commercial IC mask trimmer using 100 nsec pulse width neodymium YAG laser. Single pulses provide low resistivity no thermal annealing required. inter-metal insulating layer is formed by sputtering 2600 amorphous silicon. Chains containing forty 6.3 µm × 6.3µm first and second level were successfully connected resistances high current capability. At thickness 4400 oxide breakthrough the substrate limits operating margins power only 10% above for 100% via contacts; at one micron eliminated entirely.