Study of Crystallization Kinetics in GeSbTeSeM (M=Cu, Co, Ni, Pb) Phase Change Materials
作者： Chih Yuan Wu , Yeong Der Yao , Young Ching Juang , Rong Po Chen , Der-Ray Huang
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摘要: We obtained the experimental exothermal curves of chalcogenide alloys Ge40Sb10Te45Se3.5M1.5, M=Co, Cu, Ni, Pb, and applied Kissinger's formula to extract activation energy Ec. Our results indicate that Ec, increases while doping a small amount M metals. At isothermal electrical resistivity measurement, sputtered doped films decreases with time. Also esistivitry decrease rate (dR/dt) increase temperature. This phenomenon is due phase transition between amorphous crystalline states. The crystallization process in our study interpreted successfully by Johnson-Mehl-Avrami (JMA) transformation equation, time τ extracted from JMA equation when we compared equation. find for Ge40Sb10Te45Se5 alloy shorter significantly than without doping, it lower 50 ns at 730 K near 100 ns, respectively. These dope enhances process.
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