Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films

作者: M. Clement , E. Iborra , J. Sangrador , A. Sanz-Hervás , L. Vergara

DOI: 10.1063/1.1587267

关键词:

摘要: … , microcrystals in the film tend to grow with the c axis along the surface normal. The energy … AlN films exhibiting pure (00.2) preferred orientation and rocking curves with a full width at …

参考文章(21)
M. Fujiki, M. Takahashi, S. Kikkawa, F. Kanamaru, Microstructure and preferred orientation in rf sputter deposited AlN thin film Journal of Materials Science Letters. ,vol. 19, pp. 1625- 1627 ,(2000) , 10.1023/A:1006701823810
HWAN-CHUL LEE, JAI-YOUNG LEE, Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive r.f. magnetron sputtering Journal of Materials Science: Materials in Electronics. ,vol. 8, pp. 385- 390 ,(1997) , 10.1023/A:1018551726015
A. Benninghoven, Secondary ion mass spectrometry Wiley. ,(1990)
J. K. Liu, K. M. Lakin, K. L. Wang, Growth morphology and surface‐acoustic‐wave measurements of AIN films on sapphire Journal of Applied Physics. ,vol. 46, pp. 3703- 3706 ,(1975) , 10.1063/1.322169
Morito Akiyama, Tomohiro Harada, Chao-Nan Xu, Kazuhiro Nonaka, Tadahiko Watanabe, Preparation of highly oriented AlN thin films on glass substrates by helicon plasma sputtering and design of experiments Thin Solid Films. ,vol. 350, pp. 85- 90 ,(1999) , 10.1016/S0040-6090(99)00284-9
M Ishihara, S.J Li, H Yumoto, K Akashi, Y Ide, Control of preferential orientation of AlN films prepared by the reactive sputtering method Thin Solid Films. ,vol. 316, pp. 152- 157 ,(1998) , 10.1016/S0040-6090(98)00406-4
M. A. Khan, R. A. Skogman, R. G. Schulze, M. Gershenzon, Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 43, pp. 492- 494 ,(1983) , 10.1063/1.94363
F. Engelmark, G. Fucntes, I. V. Katardjiev, A. Harsta, U. Smith, S. Berg, Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 18, pp. 1609- 1612 ,(2000) , 10.1116/1.582394
V. Dumitru, C. Morosanu, V. Sandu, A. Stoica, Optical and structural differences between RF and DC AlxNy magnetron sputtered films Thin Solid Films. ,vol. 359, pp. 17- 20 ,(2000) , 10.1016/S0040-6090(99)00726-9
H. L. Kao, P. J. Shih, Chun-Hsi Lai, The Study of Preferred Orientation Growth of Aluminum Nitride Thin Films on Ceramic and Glass Substrates Japanese Journal of Applied Physics. ,vol. 38, pp. 1526- 1529 ,(1999) , 10.1143/JJAP.38.1526