Structural and electrical properties of thin rf sputtered Ta/sub 2/O/sub 5/

摘要: Elemental composition, chemical bonding and some electrical properties of rf sputtered tantalum oxide with thickness 10-70 nm, depending on process parameters, are investigated. The results indicate that can be obtained by sputtering even in gas mixtures N/sub c/=2.5%, but 10% oxygen content is beneficial for obtaining stoichiometric homogeneous Ta/sub 2/O/sub 5/ an abrupt interface transition region. AES XPS experiments show the stoichiometry does not depend or substrate temperature investigated ranges. Additionally measurements strongly suggest layers suitable submicron application (with high dielectric constant low fixed charge) only at T/sub s/=493 K.