Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
作者： Satoshi Kamiyama , Pierre‐Yves Lesaicherre , Hiroshi Suzuki , Akira Sakai , Iwao Nishiyama
DOI: 10.1149/1.2221612
关键词:
摘要: We describe the formation of ultrathin tantalum oxide capacitors, using rapid thermal nitridation storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition oxide. The amorphous film is deposited on nitrided polysilicon penta-ethoxy-tantalum [Ta(OC 2 H 5 ) ] and oxygen (O gas mixture at 410 o C. films are annealed 600-900 C in dry O . Densification as-deposited by annealing indispensable highly reliable capacitors. During this densification, CH 4 desorb from film, crystallizes into an orthorhombic structure
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