Structural and Luminescent Properties of Sn-Doped SiO 2 Layers
作者： F. F. Komarov , L. A. Vlasukova , O. V. Milchanin , M. A. Makhavikou , I. N. Parkhomenko
DOI: 10.1007/S10812-014-9856-2
关键词:
摘要: The formation of tin nanocrystallites in a SiO2:Sn matrix using high-dose implantation technique followed by high-temperature processing was studied. Structural phase transformations were studied plan-view transmission electron microscopy. Optical properties the implanted samples investigated photoluminescence. It shown that annealing SiO2 layers formed nanoprecipitates β-Sn and caused appearance regions enriched SnO2. Photoluminescence spectra annealed exhibited intense emission photon energy range 1.3–3.6 eV attributed to oxygen-deficit centers created at nanocluster/SiO2 interface.
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