Erratum to: A study on the competition between bias-induced charge trapping and light-induced instability in In-Ga-Zn-O thin-film transistors

摘要: Thin-film transistors (TFTs) were fabricated using In-Ga-Zn-O (IGZO) semiconductor layers deposited under different oxygen partial pressures. The devices subjected to negative bias stress (NBS), illumination (NBIS), positive (PBS) and (PBIS). While device degradation is negligible NBS, shifts in the threshold voltage (Vth) are observed presence of light which magnitude (ΔVth) decreases with increasing pressure during IGZO growth. Under PBS, undergo Vth shifts, become more severe content IGZO. However, ΔVth values PBIS, semiconductor. When gate applied, trapping charge by interstitial atoms presumed be driving force inducing shifts. On other hand, when present, generation photo-induced excess carriers from oxygen-deficient defect sites anticipated A balance between competing mechanisms either or must therefore established for example operating active matrix organic emitting diode (AMOLED) displays transparent panel arrays.