Multi-channel gate-all-around FET

摘要: A high performance GAA FET is described in which vertically stacked silicon nanowires carry substantially the same drive current as fin a conventional FinFET transistor, but at lower operating voltage, and with greater reliability. One problem that occurs existing nanowire FETs that, when metal used to form wrap-around gate, short circuit can develop between source drain regions gate portion underlies channel. The device herein, however, avoids such circuits by forming insulating barriers contact regions, prior gate. Through use of sacrificial films, fabrication process almost fully self-aligned, only one lithography mask layer needed, significantly reduces manufacturing costs.