Stacked silicon-germanium nanowire structure and method of forming the same
作者： Guo Qiang Lo , Navab Singh , Lakshmi Kanta Bera , Hoai Son Nguyen
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摘要: A method of forming a stacked silicon-germanium nanowire structure on support substrate is disclosed. The includes the substrate, comprising at least one channel layer and interchannel deposited layer; fin from structure, two supporting portions portion arranged there between; oxidizing thereby being surrounded by oxide; removing oxide to form nanowire. gate-all-around transistor that has been formed also are
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