Impact of oxygen on the work functions of Mo in vacuum and on ZrO2

作者: A. A. Knizhnik , I. M. Iskandarova , A. A. Bagatur’yants , B. V. Potapkin , L. R. C. Fonseca

DOI: 10.1063/1.1861972

关键词:

摘要: The electronic properties of molybdenum surfaces and interfaces with monoclinic zirconia (Mo∕m-ZrO2) different stoichiometries are investigated through first-principles calculations. We show that oxygen adsorption on the Mo(110) surface strongly increases Mo vacuum work function, a similar trend is observed for function upon oxygenation stoichiometric Mo∕m-ZrO2 interface, albeit to smaller extent. As expected, interface reduction/oxidation decreases/increases effective function. However, overoxidation leading formation thin MoOx layer between m-ZrO2 (Mo∕MoOx∕m-ZrO2) causes work-function decrease respect value. This result especially surprising because calculations indicate subsurface oxidation slabs Moreover, calculated rutile MoO2(110) slab ∼6.0eV, considerably larger th...

参考文章(34)
A. Kiejna, B. I. Lundqvist, First-principles study of surface and subsurface O structures at Al(111) Physical Review B. ,vol. 63, pp. 085405- ,(2001) , 10.1103/PHYSREVB.63.085405
D. R. Heslinga, H. H. Weitering, D. P. van der Werf, T. M. Klapwijk, T. Hibma, Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces Physical Review Letters. ,vol. 64, pp. 1589- 1592 ,(1990) , 10.1103/PHYSREVLETT.64.1589
J. G. Che, C. T. Chan, W-E. Jian, T. C. Leung, Surface atomic structures, surface energies, and equilibrium crystal shape of molybdenum Physical Review B. ,vol. 57, pp. 1875- 1880 ,(1998) , 10.1103/PHYSREVB.57.1875
Tsan-Chuen Leung, CL Kao, WS Su, YJ Feng, Che Ting Chan, None, Relationship between surface dipole, work function and charge transfer: Some exceptions to an established rule Physical Review B. ,vol. 68, pp. 195408- ,(2003) , 10.1103/PHYSREVB.68.195408
Hideki Hasegawa, Hideo Ohno, Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 1130- 1137 ,(1986) , 10.1116/1.583556
T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, R. J. Nemanich, Band offset measurements of the GaN (0001)/HfO2 interface Journal of Applied Physics. ,vol. 94, pp. 7155- 7158 ,(2003) , 10.1063/1.1625579
R. T. Tung, Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces Physical Review Letters. ,vol. 52, pp. 461- 464 ,(1984) , 10.1103/PHYSREVLETT.52.461
G. D. Wilk, R. M. Wallace, J. M. Anthony, Hafnium and zirconium silicates for advanced gate dielectrics Journal of Applied Physics. ,vol. 87, pp. 484- 492 ,(2000) , 10.1063/1.371888
William C. Topp, John J. Hopfield, Chemically Motivated Pseudopotential for Sodium Physical Review B. ,vol. 7, pp. 1295- 1303 ,(1973) , 10.1103/PHYSREVB.7.1295
Volker Heine, Theory of Surface States Physical Review. ,vol. 138, pp. 83- 90 ,(1965) , 10.1103/PHYSREV.138.A1689