Anode dependence of set voltage in resistive switching of metal/HfO2/metal resistors
作者： In-Sung Park , Yong Chan Jung , Jinho Ahn
DOI: 10.1063/1.4903805
关键词: Optoelectronics 、 Resistor 、 Rectangular potential barrier 、 Aluminium 、 Voltage 、 Electrode 、 Insulator (electricity) 、 Cathode 、 Anode 、 Materials science
摘要: The anode dependence of set voltage in resistive switching behaviors metal/HfO2/metal resistors is investigated by applying positive and negative polarity, changing the location electrodes made various metals including Al, Pt, Mo, Ru. When same applied to whatever cathodes are, their voltages high resistance state are very similar. strong on related potential near domain owing partial rupture conducting filament. This filaments makes thick insulator film thinner with a small barrier.
harvard.edu
scitation.org
aip.org 
sci-hub.se 参考文章(20)
Sieu D. Ha, Shriram Ramanathan, Adaptive oxide electronics: A review Journal of Applied Physics. ,vol. 110, pp. 071101- ,(2011) , 10.1063/1.3640806
A. A. Knizhnik, I. M. Iskandarova, A. A. Bagatur’yants, B. V. Potapkin, L. R. C. Fonseca, Impact of oxygen on the work functions of Mo in vacuum and on ZrO2 Journal of Applied Physics. ,vol. 97, pp. 064911- ,(2005) , 10.1063/1.1861972
Yang Yin Chen, Geoffrey Pourtois, Christoph Adelmann, Ludovic Goux, Bogdan Govoreanu, R Degreave, Malgorzata Jurczak, JA Kittl, Guido Groeseneken, DJ Wouters, None, Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device Applied Physics Letters. ,vol. 100, pp. 113513- ,(2012) , 10.1063/1.3695078
M. J. Rozenberg, I. H. Inoue, M. J. Sánchez, Nonvolatile Memory with Multilevel Switching: A Basic Model Physical Review Letters. ,vol. 92, pp. 178302- ,(2004) , 10.1103/PHYSREVLETT.92.178302
In-Sung Park, Kyong-Rae Kim, Sangsul Lee, Jinho Ahn, Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides Japanese Journal of Applied Physics. ,vol. 46, pp. 2172- 2174 ,(2007) , 10.1143/JJAP.46.2172
Ch. Walczyk, Ch. Wenger, R. Sohal, M. Lukosius, A. Fox, J. Dąbrowski, D. Wolansky, B. Tillack, H.-J. Müssig, T. Schroeder, Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications Journal of Applied Physics. ,vol. 105, pp. 114103- ,(2009) , 10.1063/1.3139282
Tsu-Hsiu Perng, Chao-Hsin Chien, Ching-Wei Chen, Peer Lehnen, Chun-Yen Chang, High-density MIM capacitors with HfO2 dielectrics Thin Solid Films. ,vol. 469, pp. 345- 349 ,(2004) , 10.1016/J.TSF.2004.08.148
S. Q. Liu, N. J. Wu, A. Ignatiev, Electric-pulse-induced reversible resistance change effect in magnetoresistive films Applied Physics Letters. ,vol. 76, pp. 2749- 2751 ,(2000) , 10.1063/1.126464
Kyung Min Kim, Byung Joon Choi, Yong Cheol Shin, Seol Choi, Cheol Seong Hwang, Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films Applied Physics Letters. ,vol. 91, pp. 012907- ,(2007) , 10.1063/1.2749846
S. Seo, M. J. Lee, D. C. Kim, S. E. Ahn, B.-H Park, Y. S. Kim, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, J.-S. Kim, J. S. Choi, J. H. Lee, S. H. Jeon, S. H. Hong, B. H. Park, Electrode dependence of resistance switching in polycrystalline NiO films Applied Physics Letters. ,vol. 87, pp. 263507- ,(2005) , 10.1063/1.2150580