Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
作者： Yang Yin Chen , Geoffrey Pourtois , Christoph Adelmann , Ludovic Goux , Bogdan Govoreanu
DOI: 10.1063/1.3695078
关键词:
摘要: In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >103 endurance and long retention at 150 °C. The Ni bottom electrode (BE) improved the yield over NiSiPt BE. To better understand forming mechanism, ab initio simulation time of flight-secondary ion mass spectroscopy were utilized. Compared to BE, BE gives larger diffusion in HfO2 lower formation enthalpy Ni2+ species during electrical forming. Both physical results supported a Ni-injection mechanism for filament formation.
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