Impact of incorporated Al on the TiN/HfO2 interface effective work function
作者： Ka Xiong , John Robertson , Geoffrey Pourtois , Jasmine Pétry , Markus Müller
DOI: 10.1063/1.2986158
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摘要: First principles calculations of the impact Al incorporation on effective work function a TiN/HfO2 interface are presented. The undoped has midgap function. We find that in metal and substituting for O dielectric make more n-type. More importantly, Hf oxide near interface—the energetically stable position most growth conditions—increases function, making it p-type. Furthermore, shift increases with increasing concentration at interface. calculated results consistent experimental data.
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