Application of HfSiON as a gate dielectric material
作者： M. R. Visokay , J. J. Chambers , A. L. P. Rotondaro , A. Shanware , L. Colombo
DOI: 10.1063/1.1476397
关键词:
摘要: … with higher metal content has indicated that these materials … , the availability of higher dielectric constants from simple … focus has been placed on materials such as HfO2 and ZrO2 . …
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