Improved resistive switching characteristics of a Pt/HfO 2 /Pt resistor by controlling anode interface with forming and switching polarity
作者： Yong Chan Jung , Sejong Seong , Taehoon Lee , Seon Yong Kim , In-Sung Park
DOI: 10.1016/J.APSUSC.2017.11.073
关键词:
摘要: … These findings suggest that the OPO procedure for the forming and switching voltage polarity could improve the performance of resistive switching devices such as memory, memristors, …
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