Comparisons of measured linewidths of submicrometer lines using optical, electrical, and SEM metrologies

摘要: AbstractAn investigation is being carried out to determine the ability ofthree methods of linewidth metrology measure dimensions features less than 0.5 rim. The three are transmitted-light optical microscopy, electrical test structure, and scanning electron microscopy(SEM). Electrical, SEM, reflected-light microscopy techniques widely used for linewidthmetrology in VLSI fabrication. However, none these widely-used currently permits traceability international standards length. Transmitted-light allows traceability; however, this technique applicable only transparent substrates. To permit theinclusion oftransmitted-light investigation, 100-nm thick Ti films werepatterned using normal processing on a 1 50-mm diameter quartz wafer. cross-bridge resistor [1] structure was since has been inindustry it results from all metrological be compared. Thedesign bridge widths structures range 0.4 tm .0 .tm. thesemeasurements show systematic uniform offsets between different techniques. In