Characterization of electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards
作者： M.W. Cresswell , R.A. Allen , R.N. Ghoshtagore , N.M.P. Guillaume , P.J. Shea
DOI: 10.1109/ICMTS.2000.844393
关键词:
摘要: This paper describes the fabrication and measurement of linewidths reference segments cross-bridge resistors patterned in [100] Bonded Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) a selection resistor test structures were measured both electrically by Scanning-Electron Microscopy (SEM) cross-section imaging.
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