作者: C. Suzuki , K. Sasaki , K. Kadota
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摘要: We have analyzed decay kinetics of CF2 radicals in the afterglow low-pressure, high-density C4F8 plasmas. The curve density has been approximated by combination first- and second-order kinetics. surface loss probability evaluated from frequency first-order process on order 10−4. This small enabled us to observe process. mechanism is self-association reaction between (CF2+CF2→C2F4). rate coefficient for this as (2.6–5.3)×10−14 cm3/s under gas pressures 2 100 mTorr. was found be almost independent pressure close agreement with known values, which are determined high above 1 Torr.