Capacitors of semiconductor devices and methods of fabricating the same

摘要: A capacitor is disposed on a semiconductor substrate and includes an interlayer dielectric layer pattern with first second openings, which expose the in predetermined regions, respectively. sidewall bottom of opening are covered lower electrode, electrode. Inner walls electrodes upper layer. The at intervenes between electrode method forming patterning substrate, thereby First formed openings. then to cover Thereafter, sequentially entire surface including pattern.