Si-compatible candidates for high-κ dielectrics with the Pbnm perovskite structure

作者: Sinisa Coh , Tassilo Heeg , J. H. Haeni , M. D. Biegalski , J. Lettieri

DOI: 10.1103/PHYSREVB.82.064101

关键词:

摘要: We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components crystal structure of five classes Pbnm perovskites. All these materials are believed to be stable on silicon therefore promising candidates for high-K dielectrics. also with various simple models, decompose lattice contribution into force constant matrix eigenmode contributions, explore a peculiar correlation between structural anisotropies in compounds give phonon frequencies infrared activities those modes that infrared-active. find CaZrO3, SrZrO3, LaHoO3, LaYO3 among most dielectrics we considered.

参考文章(59)
Kentaro Ito, Keitaro Tezuka, Yukio Hinatsu, Preparation, Magnetic Susceptibility, and Specific Heat on Interlanthanide Perovskites ABO3 (A=La–Nd, B=Dy–Lu) Journal of Solid State Chemistry. ,vol. 157, pp. 173- 179 ,(2001) , 10.1006/JSSC.2000.9071
Stefano Baroni, Stefano de Gironcoli, Andrea Dal Corso, Paolo Giannozzi, Phonons and related crystal properties from density-functional perturbation theory Reviews of Modern Physics. ,vol. 73, pp. 515- 562 ,(2001) , 10.1103/REVMODPHYS.73.515
J.-P. Maria, M. E. Hawley, B. Holländer, J. Schubert, K. Eisenbeiser, L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, T. Lee, M. J. Kim, H. S. Craft, Thermal stability of amorphous LaScO3 films on silicon Applied Physics Letters. ,vol. 89, pp. 062902- ,(2006) , 10.1063/1.2222302
V. V. Afanas’ev, A. Stesmans, L. F. Edge, D. G. Schlom, T. Heeg, J. Schubert, Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces Applied Physics Letters. ,vol. 88, pp. 032104- ,(2006) , 10.1063/1.2164432
Reji Thomas, Peter Ehrhart, Martin Roeckerath, Sven van Elshocht, Eduard Rije, Martina Luysberg, Markus Boese, Juergen Schubert, Matty Caymax, Rainer Waser, Liquid Injection MOCVD of Dysprosium Scandate Films Deposition Characteristics and High- k Applications Journal of The Electrochemical Society. ,vol. 154, ,(2007) , 10.1149/1.2731299
D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan, R.R.M. Held, S. Völk, K.J. Hubbard, High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets Springer, Boston, MA. pp. 31- 78 ,(2005) , 10.1007/0-387-26089-7_2
Albrecht Rabenau, Perowskit- und Fluoritphasen in den Systemen ZrO2?LaO1,5?MgO und ZrO2?LaO1,5?CaO Zeitschrift für anorganische und allgemeine Chemie. ,vol. 288, pp. 221- 234 ,(1956) , 10.1002/ZAAC.19562880311
Supratik Guha, Vijay Narayanan, Oxygen vacancies in high dielectric constant oxide-semiconductor films. Physical Review Letters. ,vol. 98, pp. 196101- ,(2007) , 10.1103/PHYSREVLETT.98.196101
C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V. V. Afanas’ev, A. Stesmans, D. G. Schlom, Ternary rare-earth metal oxide high-k layers on silicon oxide Applied Physics Letters. ,vol. 86, pp. 132903- ,(2005) , 10.1063/1.1886249
R. Vali, Band structure and dielectric properties of orthorhombic SrZrO3 Solid State Communications. ,vol. 145, pp. 497- 501 ,(2008) , 10.1016/J.SSC.2007.12.009