Thin film transistor with excellent stability for liquid crystal display
作者： Kesao Noguchi
DOI:
关键词:
摘要: The thin-film transistor for liquid crystal display according to the present invention has an inverted-staggered structure in which source and drain electrodes are formed above a gate electrode on glass substrate, comprises nondoped amorphous silicon film as channel region just electrode, borosilicate film. Preferably, further includes nitride over
lens.org 参考文章(10)
Seiji Fukami, Akihiko Imaya, Yoshitaka Hibino, Matrix-type liquid-crystal display panel having redundant conductor structures ,(1988)
Linda M. Garverick, George E. Possin, Insulator structure for amorphous silicon thin-film transistors ,(1990)
Kesao Noguchi, Thin film transistor array for liquid crystal display panel ,(1987)
Fumiaki Funada, Hiroaki Kato, Hirohisa Tanaka, Active liquid crystal color display device having branchless scan electrodes ,(1988)
Yuzuru Kanemori, Mikio Katayama, Motokazu Inui, Kiyoshi Nakazawa, Hidenori Negoto, Takayoshi Nagayasu, Hiroaki Kato, Akihiko Imaya, Active matrix display apparatus with drain electrode extensions ,(1989)
Makoto Shibusawa, Yoshihiro Asai, Kan Shimizu, Kouichi Kasahara, Hiroo Hori, A 6.7-in Square High-Resolution Full-Color TFT-LCD The Journal of the Institute of Television Engineers of Japan. ,vol. 44, pp. 519- 524_1 ,(1990) , 10.3169/ITEJ1978.44.519
Ikuo Sakono, Motokazu Inui, Hiroaki Kato, Liquid crystal display element. ,(1988)
Yasuhiro Ukai, Shigeo Aoki, Thin-film transistor and method of fabricating the same ,(1986)
Shimomaki Shinichi, THIN FILM TRANSISTOR AND MANUFACTURE THEREOF ,(1991)
Takashi Aoyama, Akio Mimura, Chiyuukou Ko, Hidemi Ando, Manufacture of thin film transistor ,(1989)