Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3
作者： Z. Q. Zeng , A. Podpirka , S. W. Kirchoefer , T. J. Asel , L. J. Brillson
DOI: 10.1063/1.4919891
关键词:
摘要: We report on the native defect and microwave properties of 1 μm thick Ba0.50Sr0.50TiO3 (BST) films grown MgO (100) substrates by molecular beam epitaxy (MBE). Depth-resolved cathodoluminescence spectroscopy (DRCLS) showed high densities point defects in as-deposited BST films, causing strong subgap emission between 2.0 eV 3.0 eV due to mixed cation VC oxygen Vo vacancies. Post growth air anneals reduce these with 2.2, 2.65, VO 2.4 eV intensities decreasing increasing anneal temperature nearly two orders magnitude after 950 °C annealing. These low-defect annealed exhibited quality properties, including room interdigitated capacitor tunability 13% under an electric bias 40 V tan δ 0.002 at 10 GHz bias. The results provide a feasible route grow MBE through post-air annealing guided DRCLS.
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