作者: Hsiu-Fung Cheng , Ming-Hua Yeh , Kuo-Shung Liu , I-Nan Lin
DOI: 10.1143/JJAP.32.5656
关键词:
摘要: BaTiO3 thin films possessing ferroelectric characteristics have been successfully synthesized using the laser ablation technique. The are polycrystalline when deposited with substrate temperature higher than 550°C at 1 mbar oxygen pressure. All of highly textured and dominated by (111) grains. zero-voltage dielectric constant ferroelectricity derived from C-V measurement increase temperature. best properties obtained er=485, Pr=0.32 µC/cm2, Ps=2.65 µC/cm2 Ec=7.38 kV/cm. charge storage density is highest leakage current lowest for 750°C-deposited films. They Qc=1.14 J1=0.55 µA/cm2, respectively. results indicate that promising application as high-density memory dielectrics.