作者: A. Merlen , A. Sangar , P. Torchio , L.N.D. Kallepalli , D. Grojo
DOI: 10.1016/J.APSUSC.2013.07.131
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摘要: In this paper, we produce nanoholes on a silicon surface by laser ablation. Those lead to yield enhancement of light-matter interaction. Performing Raman spectroscopy silicon, an its main mode is observed: it twice higher with the compared flat surface. Such feature appears whatever excitation wavelength (488, 514.5 and 632.8 nm) power, revealing broad band interaction enhancement. addition, no change in position shape observed, suggesting that structural damages are induced These results clearly demonstrate potentiality such nanostructures for further development photonics.