Deep level transient spectroscopy of InP quantum dots
作者： S. Anand , N. Carlsson , M‐E Pistol , L. Samuelson , W. Seifert
DOI: 10.1063/1.114937
关键词:
摘要: We report on the application of deep level transient spectroscopy to study electron emission from quantum dots. The results are presented for coherently grown InP dots embedded in Ga0.5In0.5P. determine an activation energy 220 meV one ground state With increased average occupation we observe a systematic shift DLTS peak towards lower temperatures. This interpret as being due Coulomb charging extract 8–12 per added dot agreement with our estimated value 9 meV.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(2)
Claude Weisbuch, Borge Vinter, Kevin F. Brennan, Quantum Semiconductor Structures Physics Today. ,vol. 45, pp. 88- 90 ,(1992) , 10.1063/1.2809629
M B Panish, H Temkin, Gas-Source Molecular Beam Epitaxy Annual Review of Materials Science. ,vol. 19, pp. 209- 229 ,(1989) , 10.1146/ANNUREV.MS.19.080189.001233