Quantum Dot Structures for Multi-band Infrared and Terahertz Radiation Detection

作者: G. Ariyawansa , A.G.U. Perera

DOI: 10.1016/B978-0-08-046325-4.00022-0

关键词: InfraredDark currentOptoelectronicsOpticsPolarization (waves)ResponsivityTerahertz radiationPhysicsPicosecondQuantum well infrared photodetectorQuantum dot

摘要: Publisher Summary This chapter describes the multiband infrared (IR) and terahertz radiation detection. In field of IR detector technology, quantum dot photodetectors (QDIPs) have attracted attention researchers aiming to develop optoelectronic devices with improved performance. Compared well (QWIPs), QDIPs additional degrees confinement, leading three major advantages: are sensitive normal-incidence radiation, which is forbidden in n-type QWIPs due polarization selection rules, exhibit comparatively long effective carrier lifetimes, about hundreds picoseconds, confirmed by both theory experiment, low dark current. Ideally, should show performance characteristics such as high responsivity, detectivity, operating temperatures. The explains that multi-band detection has become an important tool technology a number applications. Detecting object's emission at multiple wavelengths can be used eliminate background effects reconstruct absolute temperature. also plays role differentiating object from its background.

参考文章(96)
A. Babinski, G. Ortner, S. Raymond, M. Potemski, M. Bayer, W. Sheng, P. Hawrylak, Z. Wasilewski, S. Fafard, A. Forchel, Ground-state emission from a single InAs/GaAs self-assembled quantum dot structure in ultrahigh magnetic fields Physical Review B. ,vol. 74, pp. 075310- ,(2006) , 10.1103/PHYSREVB.74.075310
M. P. Touse, G. Karunasiri, K. R. Lantz, H. Li, T. Mei, Near- and mid-infrared detection using GaAs∕InxGa1−xAs∕InyGa1−yAs multiple step quantum wells Applied Physics Letters. ,vol. 86, pp. 093501- ,(2005) , 10.1063/1.1871350
Zhengmao Ye, Joe C. Campbell, Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar, Inas quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers Journal of Applied Physics. ,vol. 92, pp. 7462- 7468 ,(2002) , 10.1063/1.1517750
Lin Jiang, Sheng S. Li, Nien-Tze Yeh, Jen-Inn Chyi, C. E. Ross, K. S. Jones, In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K Applied Physics Letters. ,vol. 82, pp. 1986- 1988 ,(2003) , 10.1063/1.1540240
S. Raghavan, P. Rotella, A. Stintz, B. Fuchs, S. Krishna, C. Morath, D. A. Cardimona, S. W. Kennerly, High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector Applied Physics Letters. ,vol. 81, pp. 1369- 1371 ,(2002) , 10.1063/1.1498009
D. G. Esaev, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, H. C. Liu, B. N. Zvonkov, V. I. Gavrilenko, A. A. Belyanin, High performance single emitter homojunction interfacial work function far infrared detectors Journal of Applied Physics. ,vol. 95, pp. 512- 519 ,(2004) , 10.1063/1.1632553
S. S. Kim, Y. S. Choi, Kibum Kim, J. H. Kim, Seongil Im, Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties Applied Physics Letters. ,vol. 82, pp. 639- 641 ,(2003) , 10.1063/1.1540243
D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. C. Liu, M. Buchanan, Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors Journal of Applied Physics. ,vol. 93, pp. 1879- 1883 ,(2003) , 10.1063/1.1539918
Fabio Durante P Alves, G Karunasiri, N Hanson, M Byloos, HC Liu, Andrew Bezinger, Margaret Buchanan, None, NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions Infrared Physics & Technology. ,vol. 50, pp. 182- 186 ,(2007) , 10.1016/J.INFRARED.2006.10.021
Sanjay Krishna, Darren Forman, Senthil Annamalai, Philip Dowd, Petros Varangis, Tom Tumolillo, Allen Gray, John Zilko, Kathy Sun, Mingguo Liu, Joe Campbell, Daniel Carothers, Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors Applied Physics Letters. ,vol. 86, pp. 193501- ,(2005) , 10.1063/1.1924887