Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors
作者： Sanjay Krishna , Darren Forman , Senthil Annamalai , Philip Dowd , Petros Varangis
DOI: 10.1063/1.1924887
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摘要: We report the demonstration of a two-color infrared focal plane array based on voltage-tunable quantum dots-in-well (DWELL) design. The active region consists multiple layers InAs dots in an In0.15Ga0.85As well. Spectral response measurements yielded peak at 5.5μm for lower biases and 8–10μm higher biases. Using calibrated blackbody measurements, midwavelength long wavelength specific detectivity (D*) were estimated to be 7.1×1010cmHz1∕2∕W(Vb=1.0V) 2.6×1010cmHz1∕2∕W(Vb=2.6V) 78 K, respectively. This material was processed into 320×256 integrated with Indigo 9705 readout chip thermal imaging achieved 80 K.
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