SiGe/Si Quantum-Dot Infrared Photodetectors With ${\bm \delta}$ Doping
作者： Chu-Hsuan Lin , Cheng-Ya Yu , Chieh-Chun Chang , Cheng-Han Lee , Ying-Jhe Yang
DOI: 10.1109/TNANO.2008.926353
关键词:
摘要: The multicolor absorption of MOS SiGe/Si quantum-dot (QD) infrared photodetectors is demonstrated using the boron delta-doping in Si spacers. energy-dispersive X-ray spectroscopy shows that Ge concentration wetting layers much smaller than QDs. Most holes stay at ground state QDs instead layers. energy band structure calculated to understand spectrum. 3.7-6 mum due intersubband transition SiGe other 6-16 mu m mainly comes from intraband wells. Since broadband spectrum covers most atmospheric transmission windows for infrared, detection feasible this device.
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