Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy

摘要: Observation of the hole-confinement effect in boron \ensuremath{\delta}-doped Si quantum wells has been demonstrated using deep-level transient spectroscopy (DLTS) technique, based on concept treating well as a big ``trap.'' For same doping thickness but different densities, i.e., sheet concentrations, depths and subband positions are peak shift DLTS spectra is thus expected observed experimently for two samples with concentrations about 2.4\ifmmode\times\else\texttimes\fi{}${10}^{13}$ 6.0\ifmmode\times\else\texttimes\fi{}${10}^{13}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$, respectively. A self-consistent calculation subbands verifies that detected activation processes correspond to hole emissions from ground states top wells. \textcopyright{} 1996 The American Physical Society.