Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions
DOI: 10.1016/J.TSF.2009.10.097
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摘要: … in QDs, holes in the δ-doping boron wells could be excited by long-… Due to different in situ annealing times and interdiffusion … holes are accumulated at the Si/SiGe heterojunction instead …
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