Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors
作者： J. Jiang , K. Mi , S. Tsao , W. Zhang , H. Lim
DOI: 10.1063/1.1688000
关键词:
摘要: We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot photodetectors. The middle-wavelength quantum-dot photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity 3.6×1010 cm Hz1/2/W achieved at T=95 K and bias −1.4 V. background limited temperature our QDIP 140 K with 45° field view. 256×256 detector fabricated dry etching, hybridized to Litton readout chip by indium bumps. Thermal imaging temperatures up 120 K. At T=77 K, the noise equivalent difference measured as 0.509 300 f/2.3 optics.
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