Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors
作者： D. G. Esaev , S. G. Matsik , M. B. M. Rinzan , A. G. U. Perera , H. C. Liu
DOI: 10.1063/1.1539918
关键词:
摘要: The room-temperature absorption and reflection spectra in the range of 5–100 μm (3–60 THz) for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors are presented. Calculated results based on free carrier interaction with optical phonons found to be good agreement experimental results. Experimental responsivity demonstrate expected maxima from measurements due resonant cavity effects. It is shown that resonance architecture enhances performance FIR HEIWIP further improvement proposed through use n++ p++ bottom contact layers or doped substrates.
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