作者: S. G. Matsik , M. B. M. Rinzan , A. G. U. Perera , H. C. Liu , Z. R. Wasilewski
DOI: 10.1063/1.1534409
关键词:
摘要: Heterojunction interfacial work function internal photoemission (HEIWIP) detectors provide an interesting approach to the development of quantum for terahertz range. In this letter, cutoff frequency/wavelength variation HEIWIP having different Al fractions in AlGaAs/GaAs structures is experimentally verified, and a model presented designing structures. A key feature responsivity ability cover broad frequency range single detector with tailorability by adjusting fraction barrier regions. Extending response lower frequencies use AlGaAs emitters GaAs barriers also discussed.