The growth and optical properties of large, high-quality AlN single crystals
作者： Martin Strassburg , Jayantha Senawiratne , Nikolaus Dietz , Ute Haboeck , Axel Hoffmann
DOI: 10.1063/1.1801159
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摘要: The effect of impurities and defects on the optical properties AlN was investigated. High-quality single crystals more than 20mm2 size were examined. Different crucible materials growth procedures applied to bulk by physical vapor transport method vary defect impurity concentrations. crystalline orientation investigated Raman spectroscopy. Glow discharge mass spectrometry used determine trace concentration incorporated such as oxygen carbon. photoluminescence emission absorption revealed bands around 3.5 4.3eV at room temperature. Absorption edges ranging between 4.1 5.95eV observed. Since no straight correlation obtained, a major contribution or oxygen-related ruled out generate observed in Ultraviolet spectral range. carbon-related intrinsic defec...
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