Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics

摘要: Thin-film light-emitting diodes(LEDs) containing solution-processed ZnO nanocrystals (NCs) were prepared as printed electronics. The electroluminescent (EL)properties of thin-film LEDs investigated along with the structural and photoluminescence(PL)properties NCs. Scanning electron microscope x-ray diffraction studies revealed that crystal sizes D ranged from 5–11 nm, can be controlled by varying growth time t G in Zn 2 + / OH − solution at 40 ° C . evolution was analyzed using Lifshitz–Slyozov–Wagner theory, showing is limited diffusion. results PL indicated increases peak energies ultraviolet (UV) region could attributed to quantum-size effects on exciton emission NCs a small , surfaces became sufficiently passivated increases. Printed layers well-passivated different 8–11 nm used together pentacene hole transport layers. current-voltage characteristics trapped-charge-limited current mechanism. EL spectral measurements presence weak UV increased slightly decreased.