作者: Rinat F. Mamin , Takashi Inushima
DOI: 10.1103/PHYSREVB.63.033201
关键词:
摘要: The appearance of additional states an impurity under high doping levels is discussed. On the basis a Fermi level calculation, model for conductivity heavily boron-doped diamond proposed. This allows one to reproduce temperature dependence and Hall coefficient different concentrations. was found be connected with coexistence valence-band hopping conductivities in wide range. takes place over boron impurity.