Conductivity in boron-doped diamond

作者: Rinat F. Mamin , Takashi Inushima

DOI: 10.1103/PHYSREVB.63.033201

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摘要: The appearance of additional states an impurity under high doping levels is discussed. On the basis a Fermi level calculation, model for conductivity heavily boron-doped diamond proposed. This allows one to reproduce temperature dependence and Hall coefficient different concentrations. was found be connected with coexistence valence-band hopping conductivities in wide range. takes place over boron impurity.

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