Selective isotropic etch for titanium-based materials
作者： Kelly Hinckley , Timothy S. Campbell , Benu B. Patel , Gregory A. Head , Daniel P. Chesire
DOI:
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摘要: A process for etching a sacrificial layer of structure. The structure is exposed to plasma derived from nitrogen trifluoride the layer. selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications include formation integrated circuit structures MEMS structures.
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