Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors
作者： Chao Xie , Xing-Tong Lu , Xiao-Wei Tong , Zhi-Xiang Zhang , Feng-Xia Liang
关键词:
摘要: Due to its significant applications in many relevant fields, light detection in the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors have enabled the realization of various high‐performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a …
sci-hub.se 参考文章(288)
Udo Schühle, Jean-François Hochedez, Solar-blind UV detectors based on wide band gap semiconductors ISSI Scientific Reports Series. ,vol. 9, pp. 467- 477 ,(2013) , 10.1007/978-1-4614-7804-1_26
J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Optical and electrical properties of Mg-doped p-type AlxGa1−xN Applied Physics Letters. ,vol. 80, pp. 1210- 1212 ,(2002) , 10.1063/1.1450038
J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, W. V. Schoenfeld, Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO Applied Physics Letters. ,vol. 97, pp. 161113- ,(2010) , 10.1063/1.3503634
Wei Zheng, Feng Huang, Ruisheng Zheng, Honglei Wu, Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire. Advanced Materials. ,vol. 27, pp. 3921- 3927 ,(2015) , 10.1002/ADMA.201500268
R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, M. Razeghi, 320×256 solar-blind focal plane arrays based on AlxGa1−xN Applied Physics Letters. ,vol. 86, pp. 011117- ,(2005) , 10.1063/1.1846936
Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, X. W. Fan, MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range Applied Physics Letters. ,vol. 93, pp. 173505- ,(2008) , 10.1063/1.3002371
P. Feng, J. Y. Zhang, Q. H. Li, T. H. Wang, Individual β-Ga2O3 nanowires as solar-blind photodetectors Applied Physics Letters. ,vol. 88, pp. 153107- ,(2006) , 10.1063/1.2193463
A. L. Beck, R. D. Dupuis, J. C. Campbell, C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode Applied Physics Letters. ,vol. 80, pp. 3754- 3756 ,(2002) , 10.1063/1.1480484
Qinghong Zheng, Feng Huang, Jin Huang, Qichan Hu, Dagui Chen, Kai Ding, High-Responsivity Solar-Blind Photodetector Based on $ \hbox{Mg}_{0.46}\hbox{Zn}_{0.54}\hbox{O}$ Thin Film IEEE Electron Device Letters. ,vol. 33, pp. 1033- 1035 ,(2012) , 10.1109/LED.2012.2196675
W. Yang, S. S. Hullavarad, B. Nagaraj, I. Takeuchi, R. P. Sharma, T. Venkatesan, R. D. Vispute, H. Shen, Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors Applied Physics Letters. ,vol. 82, pp. 3424- 3426 ,(2003) , 10.1063/1.1576309