CHAPTER 8 – Nonlinear Optical Properties of Gallium Nitride

摘要: This chapter discusses nonlinear optical properties of gallium nitride (GaN). Semiconductor optics is motivated by the pursuit new electro-optical devices for applications in areas such as telecommunications and computing. The continuing improvements growth processing wide-bandgap III–V semiconductors are great interest to community. advances deposition GaN epitaxial films provide investigators with an wave-guiding material both a large bandwidth high damage threshold. characterization second- third-order nonlinearities has accelerated over past decade because rapid improvement quality epitaxially grown material. intrinsic waveguide nature film deposit/substrate suggests that or multilayer structures candidates device platforms where propagation lengths about few millimeters (high-conversion efficiencies) possible.