High gain photoconductive semiconductor switch having tailored doping profile zones

摘要: A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to device. The are of sufficient depth lateral extent isolate damage caused by high current filaments that created in device when it is turned on. may be formed etching depressions into substrate, then conducting epitaxial regrowth material desired profile. They surface epitaxy. also deep diffusion processes. act reduce energy density at suppressing collective impact ionization formation near contact reducing intensity through enhanced spreading within zones.