PCSS-based semiconductor device, switching device, and method

作者: Chenggang Xie

DOI:

关键词:

摘要: A present novel and non-trivial semiconductor device, switch device method performed by the is disclosed. for conducting current may be comprised of an SI substrate a plurality electrodes deposited upon substrate, where at least one electrode transparent conductive material (“TCM”). switching electromagnetic radiation sources devices. The receiving cycles. During first cycle, irradiated, in response, flow through provided to user circuit. second from circuit received device.

参考文章(8)
Robert J. Youmans, Anderson H. Kim, Melvin J. Wade, Maurice Weiner, Robert J. Zeto, Michelle A. Dornath-Mohr, High power photoconductor bulk GaAs switch ,(1990)
Jonathan Harrold, Graham John Woodgate, Optical switching apparatus ,(2002)
Guillermo M. Loubriel, Fred J. Zutavern, Albert G. Baca, GaAs photoconductive semiconductor switch ,(1996)
Gary J. Denison, Guillermo M. Loubriel, Harold P. Hjalmarson, Fred J Zutavern, Andrew A. Allerman, Charles T. Sullivan, Alan Mar, Hong Q. Hou, Thomas E. Zipperian, Wesley D. Helgeson, Albert G. Baca, Martin W. O'Malley, Darwin J. Brown, High gain photoconductive semiconductor switch having tailored doping profile zones ,(1999)
Robert J. Youmans, Anderson H. Kim, Louis J. Jasper, Maurice Weiner, Robert J. Zeto, Optically activated sub-nanosecond hybrid pulser ,(1991)
Richard G. Madonna, Gregory H. Vilardi, High-speed switching device for monostatic impulse radar ,(1995)